Computational Aspects
of Materials Science
 


Abstracts for Talks

Talk 1: "Modeling, Simulation and Control for Epitaxial Growth of Thin Films"
Russell Caflisch

Epitaxy is the growth of a thin film as a single crystal whose properties are determined by those of the substrate. Because of the wide range of length and time scales involved in epitaxial growth, no single model is adequate for its description. This talk will describe a multi-scale approach involving atomistic, continuum and bulk models. In particular, this includes a new island dynamics model for epitaxial growth and a level set method for its simulation. This model involves coarse graining in the lateral directions, but retains atomistic discreteness in the growth direction. It has been validated by comparison to results from kinetic Monte Carlo simulations. Finally, we discuss application of feedback control in molecular beam epitaxy (MBE), both in simulation and in experiment.

Talk 2: "Large Connecting Ab Inito and Kinetic Models: Simulation of the Equilibrium and Growth Kinetics of III-V Semiconductor Surfaces"

Mark Gyure

Devices based on III-V semiconductor materials are currently the workhorse for high performance, high-frequency electronic and optoelectronic applications. While most telecommunication appliances currently use GaAs-based materials, InAs, when used in conjunction with AlSb or GaSb, is a promising material for next-generation high-speed, low power devices. We have developed a model for the epitaxial growth of InAs which includes microscopic details (i.e. surface reconstructions and zincblende lattice) and different behavior of In and As kinetics. The relevant parameters are determined mainly by ab initio density functional calculations. For describing equilibrium properties, the model contains essentially no free parameters and correctly describes experimentally observed features of the growth surface such as a phase transition from the thermodynamically stable (2x4)-a2 to the (2x4)-b2 reconstruction. The model also correctly describes all of the known experimental trends for InAs growth, including the As pressure dependence. The simulation results are supported by a detailed comparison at a microscopic level to experimental STM data.

Talk 3: "Multiscale Modeling of Microstructural Evolution using the Phase-Field Method: From Atoms to Dendrites"

Alain Karma

The phase-field method has emerged as a powerful alternative to traditional front tracking methods for modeling a wide range of microstructural evolution problems in materials science. This talk will discuss the basic physics/thermodynamics of this approach and illustrate its application in the context of dendritic solidification.

Talk 4: "Ferroelectricity in Perovskite Solid Solutions and Thin-Film Heterostructures by Molecular-Dynamics Simulation"

Simon Phillpot

We have recently succeeded in constructing the first atomic-level description of any perovskite that can both describe the full phase diagram and can be used for the simulation of ferroelectricity in interfacial and defected systems. This model, which combines a Buckingham potential with an isotropic shell model, provides a good description of the ferroelectric phase behavior of KNbO3, reproducing the experimentally observed sequence of phases on heating: rhombohedral, orthorhombic, tetragonal and finally cubic, with transition temperatures very close to the experimental values. Furthermore, the lattice parameters in the four phases agree with experimental values to better than 1%, and the calculated polarization in the tetragonal phase is only about 20% larger than the experimental value.

We have also constructed a potential that describes the incipient ferroelectric behavior of KTaO3; this has allowed us to simulate the ferroelectric properties of KTaxNb1-xO3 solid solutions and KNbO3/KTaO3 superlattices. In each case, the atomic-level information provided by the simulations has allowed us to elucidate the intimate coupling of the ferroelectric behavior of the KNbO3 and KTaO3 components and the coupling between ferroelectricity and elastic strain.

Talk 5: "Computational Methods for Crystal Microstructure"

Mitchell Luskin

Microstructure can be modeled in some crystals by energy densities with multiple symmetry-related minimizing configurations. For martensitic crystals, the bulk elastic energy is minimized only by the fine scale mixing of the symmetry-related variants.

Several computational methodologies can be used to compute martensitic microstructure, the most appropriate and efficient depends on what information is desired. Direct finite element computation has been successfully done to study the detailed microstructure for several problems. For the computation of macroscopic deformation or properties, it may sometimes be more efficient to use effective or relaxed energy densities that account for the energy attainable by microstructure.

Talk 6: "The Dynamics of Late-Stage Phase Separation in Elastically Stressed Solids"

Peter Voorhees

Phase separation in crystalline solids is almost always accompanied by long ranged elastic stress. These stresses, which result from a difference in lattice parameter between the particle and matrix can give rise to qualitatively new phenomena as compared those in a stress-free system, such as changes in particle shape with increasing particle size, particle migration and alignment, and inverse coarsening wherein small particles grow at the expense of large particles. At issue is the manner in which these local phenomena influence the dynamics of ensemble-averaged quantities. We have investigated the dynamics of Ostwald ripening in elastically stressed crystalline solids through large-scale numerical simulations that employ many thousands of particles. Using the insight provided by the simulations, a theory for the dynamics of late-stage phase separation in elastically anisotropic homogeneous solids is developed. Both the theory and simulations show that for the systems considered elastic stress does not alter the exponent of the temporal power law for the average particle size but does effect the amplitude of the power law in a manner that is only a function of the symmetry of the particle morphology. The effect of interparticle elastic interactions on particle morphology and spatial correlations will also be discussed.

Talk 7: "The Design and Understanding of Microstructured Photonic Crystals and Electro-optic Devices"

Christopher White

The insatiable need for communications bandwidth has fueled an unprecedented growth in optical networking systems and components. Optical components will play an increasingly important role as networks and computers approach the inherent limitations of electrical systems. I will present details on two areas of optical device design which rely heavily on the use of computational methods, understanding microstructured photonic crystals and optimizing high-speed, electro-optic modulators.

Photonic crystals are composite systems composed of a periodic arrangement (often on the order of the wavelength light) of two or more materials with different optical properties. By carefully designing the structure, we create optical materials which exhibit optical properties controlled primarily by the crystal structure. The most compelling example of such a photonic crystal is the photonic bandgap crystal. Similar to its electronic analogue, a bandgap crystal inhibits the propagation of light (photons) which has a frequency falling within the bandgap. However, the utility of photonic crystals reaches far beyond this specific example. With the help of optical modeling tools, we can design microstructured materials which exhibit optical properties difficult to find in single material or more conventional composite materials. I will present results concerning the modeling and fabrication of 3d photonic crystals and 2d microstructured optical fibers.

The second area I will discuss will concentrate on the design and modeling of electro-optic modulators. An electro-optic modulator is the primary interface between electrical signals and the optical signals used for long haul communications networks. A modulator relies upon a material (such as lithium niobate) which changes effective refractive index when subjected to an applied electric field. The design of high speed modulators (10 Gb and above) thus requires the modeling of the interaction of an applied RF signal and the optical signal to be modulated. The fabrication of these modulators requires significant understanding of the processing tolerances, but also requires an understanding of the material response to both RF and optical excitation. I will discuss the development of an optical, vector beam propagation code and coupled Poisson solver for the treatment of electro-optic materials and devices.


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