Magnet-in-the-Semiconductor Nanomaterials

January 11, 2014

TEM images of as-synthesized (a) FePt/CdSe and (b) FePt/CdS, and In2Se42– MCC-capped (c) FePt/CdSe and (d) FePt/CdS core–shell nanostructures. Insets of panels a and b show high-resolution TEM images

High Electron Mobility in Heterostructure Arrays

We report a colloidal synthesis, and electrical and magnetotransport properties of multifunctional “magnet-in-the-semiconductor” nanostructures composed of FePt core and CdSe or CdS shell.

Thin films of all-inorganic FePt/CdSe and FePt/CdS core–shell nanostructures capped with In2Se42– molecular chalcogenide (MCC) ligands exhibited n-type charge transport with high field-effect electron mobility of 3.4 and 0.02 cm2/V·s, respectively.

These nanostructures also showed a negative magnetoresistance characteristic for spin-dependent tunneling.

We discuss the mechanism of charge transport and gating in the arrays of metal/semiconductor core–shell nanostructures. 

Magnet-in-the-Semiconductor Nanomaterials: High Electron Mobility in All-Inorganic Arrays of FePt/CdSe and FePt/CdS Core–Shell Heterostructures
Jae Sung Son, Jong-Soo Lee, Elena V. Shevchenko, and Dmitri V. Talapin
The Journal of Physical Chemistry Letters 2013 4 (11), 1918-1923. DOI: 10.1021/jz400612d

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